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    2002 May 28 3 NXP Semiconductors Product data sheet High-speed switching diode BAS216 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage see Fig.3 IF = 1 mA ? 715 mV IF = 10 mA ? 855 mV IF = 50 mA ? 1 V IF = 150 mA ? 1.25 V IR reverse current see Fig.5 VR = 25 V ? 30 nA VR = 75 V ? 1 μA VR = 25 V; Tj = 150 °C ? 30 μA VR = 75 V; Tj = 150 °C ? 50 μA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 ? 1.5 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 ?; measured at IR = 1 mA; see Fig.7 ? 4 ns Vfr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.8 ? 1.75 V SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 200 K/W Rth j-a thermal resistance from junction to ambient note 1 315 K/W |